Evidence map›Paper›PMID 39414827›Full record

ArticleNature communications2024

27.09%-efficiency silicon heterojunction back contact solar cell and going beyond.

Genshun Wang, Qiao Su, Hanbo Tang, Hua Wu, Hao Lin, Can Han, Tingting Wang, Chaowei Xue, Junxiong Lu, Liang Fang and 3 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.

0numbers the graph read from it
0cells of the map it votes in
13citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

13 citing papers in PubMed.

  1. Article
  2. Review
  3. Review
  4. Article
  5. Article
  6. Article
  7. Article
  8. Article
  9. Review
  10. Article
  11. Article
  12. Review
  13. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Genshun Wang *School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China.
Qiao Su *School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China.
Hanbo Tang *School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China.
Hua Wu *LONGi Central R&D Institute, Xi'an, 712000, China.
Hao LinSchool of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China. linh229@mail.sysu.edu.cn.ORCID http://orcid.org/0000-0002-7115-3907
Can HanSchool of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China.
Tingting WangLONGi Central R&D Institute, Xi'an, 712000, China.
Chaowei XueLONGi Central R&D Institute, Xi'an, 712000, China.ORCID http://orcid.org/0000-0002-0973-2924
Junxiong LuLONGi Central R&D Institute, Xi'an, 712000, China.
Liang FangLONGi Central R&D Institute, Xi'an, 712000, China. fangliang4@longi.com.ORCID http://orcid.org/0000-0002-2384-5845
Zhenguo LiLONGi Central R&D Institute, Xi'an, 712000, China. lzg@longi.com.ORCID http://orcid.org/0009-0009-1033-1130
Xixiang XuLONGi Central R&D Institute, Xi'an, 712000, China. xuxixiang@longi.com.ORCID http://orcid.org/0000-0003-1393-4489
Pingqi GaoSchool of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, P.R. China. gaopq3@mail.sysu.edu.cn.ORCID http://orcid.org/0000-0001-8845-4645

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62034009
6 · The paper itself

Abstract

Crystalline-silicon heterojunction back contact solar cells represent the forefront of photovoltaic technology, but encounter significant challenges in managing charge carrier recombination and transport to achieve high efficiency. In this study, we produced highly efficient heterojunction back contact solar cells with a certified efficiency of 27.09% using a laser patterning technique. Our findings indicate that recombination losses primarily arise from the hole-selective contact region and polarity boundaries. We propose solutions to these issues and establish a clear relationship between contact resistivity, series resistance, and the design of the rear-side pattern. Furthermore, we demonstrate that the wafer edge becomes the main channel for current density loss caused by carrier recombination once electrical shading around the electron-selective contact region is mitigated. With the advanced nanocrystalline passivating contact, wafer edge passivation technologies and meticulous optimization of front anti-reflection coating and rear reflector, achieving efficiencies as high as 27.7% is feasible.

Identifiers

PMID39414827
PMCPMC11484749

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.