Evidence map›Paper›PMID 39409422›Full record

ArticleSensors (Basel, Switzerland)2024

Enhancing the Resistive Switching Properties of Transparent HfO

Taegi Kim, Doowon Lee, Myoungsu Chae, Kyeong-Heon Kim, Hee-Dong Kim

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Tuning TiOACS applied materials & interfaces · 2026
    Article
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  4. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Taegi KimDepartment of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
Doowon LeeDivision of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan 31080, Republic of Korea.ORCID 0000-0001-6635-5953
Myoungsu ChaeInstitute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro City 153-8505, Tokyo, Japan.ORCID 0000-0001-5067-7990
Kyeong-Heon KimDepartment of Convergence Electronic Engineering, Gyeongsang National University, Jinju-si 52725, Republic of Korea.
Hee-Dong KimDepartment of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

Funding

Korea Institute for Advancement of Technology P0020966National Research Foundation of Korea NRF-2022R1F1A1060655National Research Foundation of Korea RS-2024-00340531
6 · The paper itself

Abstract

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 10

Indexed as

gasistor applicationresistive switchingroughness of BEtransparent memristor

Identifiers

PMID39409422
PMCPMC11479299

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.