ArticleNanomaterials (Basel, Switzerland)2024
Synergic Effect of N and Se Facilitates Photoelectric Performance in Co-Hyperdoped Silicon.
Haibin Sun, Xiaolong Liu, Caixia Xu, Long Xu, Yuwei Chen, Haima Yang, Xing Yang, Peng Rao, Shengli Sun, Li Zhao
Abstract read
In one paragraphArticle in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 · Who and what moneyAuthors and funding
10 authors.
Haibin SunKey Laboratory of Intelligent Infrared Perception Chinese Academy Science (CAS), Shanghai Institute of Technical Physics, Chinese Academy Science (CAS), Shanghai 200043, China.ORCID 0000-0002-1229-4865 Xiaolong LiuDepartment of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.ORCID 0000-0002-1976-492X Caixia XuSchool of Primary Education, Chongqing Normal University, Chongqing 400700, China.
Long XuChongqing Key Laboratory of Micro&Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China.ORCID 0000-0002-3243-4087 Yuwei ChenDepartment of Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Vuorimiehentie 5, FI-02150 Espoo, Finland.ORCID 0000-0003-0148-3609 Haima YangSchool of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.ORCID 0000-0001-5286-2989 Xing YangState Key Laboratory of Pulsed Power Laser Technology, Electronic Countermeasure Institute, National University of Defense Technology, Hefei 230037, China.ORCID 0000-0002-8824-1356 Peng RaoKey Laboratory of Intelligent Infrared Perception Chinese Academy Science (CAS), Shanghai Institute of Technical Physics, Chinese Academy Science (CAS), Shanghai 200043, China.
Shengli SunKey Laboratory of Intelligent Infrared Perception Chinese Academy Science (CAS), Shanghai Institute of Technical Physics, Chinese Academy Science (CAS), Shanghai 200043, China.
Li ZhaoState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China.
Funding
Academy of Finland projects 336145Foreign Experts Program of Ministry of Science and Technology in China G2021026027LNatural Science Foundation of Chongqing CSTB2023NSCQ-MSX0807Shanghai Pujiang Program 23PJ1414800State Key Laboratory of High Field Laser Physics SKl2023KF40Strategic Priority Research Program of the Chinese Academy of Sciences XDA22030202
6 · The paper itselfAbstract
Femtosecond-laser-fabricated black silicon has been widely used in the fields of solar cells, photodetectors, semiconductor devices, optical coatings, and quantum computing. However, the responsive spectral range limits its application in the near- to mid-infrared wavelengths. To further increase the optical responsivity in longer wavelengths, in this work, silicon (Si) was co-hyperdoped with nitrogen (N) and selenium (Se) through the deposition of Se films on Si followed by femtosecond (fs)-laser irradiation in an atmosphere of NF
Indexed as
femtosecond (fs)-laser irradiationN and Se hyperdoped siliconphotodetectorssilicon
Identifiers
PMID39404318
PMCPMC11478113
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