ReviewNanomaterials (Basel, Switzerland)2024
Quantum Dots for Resistive Switching Memory and Artificial Synapse.
Review in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
4 citing papers in PubMed.
- Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.Nanomaterials (Basel, Switzerland) · 2026Article
- Multifunctional Colloidal Quantum Dots-Based Light-Emitting Devices for On-Chip Integration.Nanomaterials (Basel, Switzerland) · 2025Review
- Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives: A Comprehensive Performance Analysis.ACS omega · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors.
Funding
Abstract
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properties, solution processability, fast switching speeds, and low operating voltages, quantum dots (QDs) have drawn substantial research attention as candidate materials for memristors and artificial synapses. This review covers recent advancements in QD-based resistive random-access memory (RRAM) for resistive memory devices and artificial synapses. Following a brief introduction to QDs, the fundamental principles of the switching mechanism in RRAM are introduced. Then, the RRAM materials, synthesis techniques, and device performance are summarized for a relative comparison of RRAM materials. Finally, we introduce QD-based RRAM and discuss the challenges associated with its implementation in memristors and artificial synapses.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.