Evidence map›Paper›PMID 39402907›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2024

The Role of Hydrogen in ReRAM.

Horatio R J Cox, Matthew K Sharpe, Callum McAleese, Mikko Laitinen, Jeevan Dulai, Richard Smith, Jonathan England, Wing H Ng, Mark Buckwell, Longfei Zhao and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. The Role of Hydrogen in ReRAM.Advanced materials (Deerfield Beach, Fla.) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Horatio R J CoxDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.ORCID https://orcid.org/0000-0002-1257-6299
Matthew K SharpeIon Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK.ORCID https://orcid.org/0000-0002-6189-3565
Callum McAleeseIon Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK.ORCID https://orcid.org/0009-0008-3155-7641
Mikko LaitinenDepartment of Physics, University of Jyväskylä, P.O. Box 35, Jyväskylä, FI-40014, Finland.ORCID https://orcid.org/0000-0002-9031-8551
Jeevan DulaiIon Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK.
Richard SmithIon Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK.
Jonathan EnglandIon Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK.
Wing H NgDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
Mark BuckwellDepartment of Chemical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.ORCID https://orcid.org/0000-0003-0031-5929
Longfei ZhaoDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
Sarah FearnDepartment of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.ORCID https://orcid.org/0000-0002-9798-8398
Adnan MehonicDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.ORCID https://orcid.org/0000-0002-2476-5038
Anthony J KenyonDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.ORCID https://orcid.org/0000-0003-2249-2184

Funding

Engineering and Physical Sciences Research Council EP/X017001/1
6 · The paper itself

Abstract

Previous research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox-based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally. Here quantitative measurements, corroborated across multiple techniques are reported, that reveal ReRAM devices, whether manufactured in a university setting or research foundry, contain concentrations of hydrogen at levels likely to impact resistance switching behavior. To the knowledge this is the first empirical measurement depth profiling hydrogen concentration through a ReRAM device. Applying a recently-developed Secondary Ion Mass Spectrometry analysis technique enables to measure hydrogen diffusion across the interfaces of SiO

Indexed as

defectshydrogenmemristorReRAMToF‐ERDA

Identifiers

PMID39402907
PMCPMC11681311

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.