Evidence map›Paper›PMID 39382149›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Microscopic Origin of Polarity-Dependent V

Ha-Jun Sung, Minwoo Choi, Zhe Wu, Hwasung Chae, Sung Heo, Youngjae Kang, Bonwon Koo, Jong-Bong Park, Wooyoung Yang, Yongyoung Park and 3 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Article
  6. Microscopic Origin of Polarity-Dependent VAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Ha-Jun SungThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.ORCID https://orcid.org/0000-0002-1037-4482
Minwoo ChoiThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Zhe WuAdvanced Process Development Team, Semiconductor R&D Center, Samsung Electronics, Hwaseong-si, 18448, South Korea.
Hwasung ChaeAdvanced Process Development Team, Semiconductor R&D Center, Samsung Electronics, Hwaseong-si, 18448, South Korea.
Sung HeoAnalytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Youngjae KangThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.ORCID https://orcid.org/0000-0001-5329-096X
Bonwon KooThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Jong-Bong ParkThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Wooyoung YangThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Yongyoung ParkThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Yongnam HamThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.
Kiyeon YangThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.ORCID https://orcid.org/0009-0002-6106-7607
Chang Seung LeeThin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self-selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This study investigates the mechanism behind the polarity-dependent threshold voltage shift (ΔV

Indexed as

amorphous chalcogenidesovonic threshold switchingself‐selecting memory

Identifiers

PMID39382149
PMCPMC11600224

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.