ReviewMicromachines2024
Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography.
Review in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
7 citing papers in PubMed.
- Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography.Chemical science · 2026Review
- An Ether-Containing Hafnium-Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.Nanomaterials (Basel, Switzerland) · 2026Article
- Atomistic insights into EUV photoresist photolysis via full temporal dynamics.Communications chemistry · 2026Article
- The Evolution of Lithography: From Resolution Scaling to Manufacturing Constraints.Micromachines · 2026Review
- Pathways to high-performance extreme ultra-violet lithography resists: Dissociative electron attachment to pentafluoro-phenyl triflate.iScience · 2025Article
- High-Resolution Photolithographic Patterning of Conjugated Polymers via Reversible Molecular Doping.Polymers · 2025Article
- Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication.International journal of molecular sciences · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent progress in inorganic metal-oxide-based photoresists, with a focus on their applications in EUVL. The unique properties of zinc-based, tin-oxygen, and IVB group inorganic photoresists are examined, showcasing their enhanced chemical reactivity and precise patterning capabilities. Key advancements include the development of zinc oxide and tin oxide nanoparticles, which demonstrate significant improvements in photon absorption and solubility under extreme ultraviolet exposure. Additionally, the review delves into the photochemical reactions of tin-oxygen clusters and the influence of various ligands on film density and cross-linking. The findings suggest that these inorganic photoresists not only improve photolithographic performance but also hold potential for broader applications, such as pyroelectric infrared sensors and 3D printing. Future research directions are outlined, including the optimization of process parameters, the exploration of new ligand and metal combinations, and the evaluation of the environmental benefits of inorganic photoresists over traditional organic ones. These advancements are poised to further enhance the resolution and patterning capabilities required for next-generation semiconductor devices.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.