ArticleNature communications2024
Doping strategy in metavalently bonded materials for advancing thermoelectric performance.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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Who cites it
6 citing papers in PubMed.
- Advances in MgAgSb thermoelectrics: from materials to devices.Chemical science · 2026Review
- Intensive Widmannstätten Nanoprecipitates Catalyze SnTe With State-of-the-Art Thermoelectric Performance.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Metavalent alloying and vacancy engineering enable state-of-the-art cubic GeSe thermoelectrics.Nature communications · 2025Article
- Article
- Optimization of thermoelectric performance in Sm-substituted SrSi₂ via carrier transport and lattice engineering.Science and technology of advanced materials · 2025Article
- Interplay between metavalent bonds and dopant orbitals enables the design of SnTe thermoelectrics.Nature communications · 2024Article
Corrections and comments
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Authors and funding
14 authors.
Funding
Abstract
Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (Ge
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Registered trials
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