ReviewThe journal of physical chemistry letters2024
Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices.
Review in The journal of physical chemistry letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- A Perovskite Memdiode-Based Neuromorphic in Silico Surrogate Model for Emulating Predictive Coding Failure in Diabetic Neuropathy.Neuroinformatics · 2026Article
- Voltage-Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Spiking without Resets: Continuous Integrate-and-Fire Dynamics in Neuronal Circuits.The journal of physical chemistry letters · 2026Article
- Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Lead-free halide perovskite memristors for scalable crossbar arrays.Nano convergence · 2025Review
- Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing.Small methods · 2025Review
- Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model.The journal of physical chemistry letters · 2025Article
Corrections and comments
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Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
With the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) have been in the spotlight as potential candidates for these devices due to their unique switching characteristics with low energy consumption and flexible integration compatibility across various sources for scalability. We outline the characteristics and operating principles of HP-based memristors and their neuromorphic devices. We explain filamentary- and interface-type switching according to the type of conducting pathway occurring inside the active HP layer and the operating mechanisms depending on the species that make up this conducting pathway. We summarize the types and mechanisms of current changes beneficial for neuromorphic device applications and finally organize various suggested analysis tools and physical models to enable experimental determination of switching mechanisms from various perspectives.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.