ArticleNanomaterials (Basel, Switzerland)2024
Enhancing Long-Term Memory in Carbon-Nanotube-Based Optoelectronic Synaptic Devices for Neuromorphic Computing.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
7 citing papers in PubMed.
- Charge-Trapping-Enhanced Resistive Switching and Charge Storage in Silk Fibroin-TiOMicromachines · 2026Article
- Programming pulse width dependent charge retention characteristics of low-power synaptic thin film transistors.Scientific reports · 2025Article
- Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption.ACS applied materials & interfaces · 2025Article
- Synaptic Plasticity and Memory Retention in ZnO-CNT Nanocomposite Optoelectronic Synaptic Devices.Materials (Basel, Switzerland) · 2025Article
- Capacitance and Dielectric Properties of Spin-Coated Silk Fibroin Thin Films for Bioelectronic Capacitors.Materials (Basel, Switzerland) · 2025Article
- Enhanced Long-Term In-Sensing Memory in ZnO Nanoparticle-Based Optoelectronic Synaptic Devices Through Thermal Treatment.Materials (Basel, Switzerland) · 2025Article
- GaNanomaterials (Basel, Switzerland) · 2024Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
This study investigates the impact of spin-coating speed on the performance of carbon nanotube (CNT)-based optoelectronic synaptic devices, focusing on their long-term memory properties. CNT films fabricated at lower spin speeds exhibited a greater thickness and density compared to those at higher speeds. These denser films showed enhanced persistent photoconductivity, resulting in higher excitatory postsynaptic currents (EPSCs) and the prolonged retention of memory states after UV stimulation. Devices coated at a lower spin-coating speed of 2000 RPM maintained EPSCs above 70% for 3600 s, outperforming their higher-speed counterparts in long-term memory retention. Additionally, the study demonstrated that the learning efficiency improved with repeated UV stimulation, with fewer pulses needed to achieve the maximum EPSC in successive learning cycles. These findings highlight that optimizing spin-coating speeds can significantly enhance the performance of CNT-based synaptic devices, making them suitable for applications in neuromorphic computing and artificial neural networks requiring robust memory retention and efficient learning.
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Registered trials
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