ArticleMicrosystems & nanoengineering2024
Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors.
Article in Microsystems & nanoengineering, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
2 citing papers in PubMed.
- Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review.Micromachines · 2026Review
- High-temperature electrical performance and interface adhesion performance of SiC-based Pt thin-film RTDs.Microsystems & nanoengineering · 2026Article
Corrections and comments
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Authors and funding
13 authors.
Funding
Abstract
Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al
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Registered trials
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