Evidence map›Paper›PMID 39324607›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing.

Ryun-Han Koo, Wonjun Shin, Jangsaeng Kim, Jiyong Yim, Jonghyun Ko, Gyuweon Jung, Jiseong Im, Sung-Ho Park, Jae-Joon Kim, Suraj S Cheema and 2 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Ryun-Han KooDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.ORCID https://orcid.org/0000-0002-5708-3308
Wonjun ShinDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jangsaeng KimDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jiyong YimDepartment of Electrical Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Jonghyun KoDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Gyuweon JungDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jiseong ImDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Sung-Ho ParkDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jae-Joon KimDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Suraj S CheemaResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Daewoong KwonDepartment of Electrical Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Jong-Ho LeeDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.ORCID https://orcid.org/0000-0003-3559-9802

Funding

Development of PDK and process integration platform for new memory-CMOS co-integrated PIM systemInstitute of Information and Communications Brain Korea 21 Plus ProjectKorea government (MSIT) RS-2023-00260527Korea government (MSIT) RS-2024-00399394
6 · The paper itself

Abstract

Ferroelectric (FE) materials are key to advancing electronic devices owing to their non-volatile properties, rapid state-switching abilities, and low-energy consumption. FE-based devices are used in logic circuits, memory-storage devices, sensors, and in-memory computing. However, the primary challenge in advancing the practical applications of FE-based memory is its reliability. To address this problem, a novel polarization pruning (PP) method is proposed. The PP is designed to eliminate weakly polarized domains by applying an opposite-sign pulse immediately after a program or erase operation. Significant improvements in the reliability of ferroelectric devices are achieved by reducing the depolarization caused by weakly polarized domains and mitigating the fluctuations in the ferroelectric dipole. These enhancements include a 25% improvement in retention, a 50% reduction in read noise, a 45% decrease in threshold voltage variation, and a 72% improvement in linearity. The proposed PP method significantly improves the memory storage efficiency and performance of neuromorphic systems.

Indexed as

Ferroelectricsfield effect transistormemory devicesneuromorphic computingpolarization

Identifiers

PMID39324607
PMCPMC11578341

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.