ArticleScience advances2024
Ultrasensitive integrated circuit sensors based on high-order non-Hermitian topological physics.
Article in Science advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- Deep-subwavelength exceptional point in microwave plasmonic resonators for enhanced sensing.Light, science & applications · 2026Article
- Observation of localization reversal and harmonic generation in nonlinear non-Hermitian skin effect.Nature communications · 2026Article
- Critical point-based wireless sensors enabling tiny perturbation detection.Science advances · 2026Article
- Operating a non-Hermitian atomic magnetometer with programmable digital electronics.Nature communications · 2026Article
- Sensitivity Evaluation for Global Perturbations in Non-Hermitian Skin-Effect Sensors.Nanophotonics (Berlin, Germany) · 2026Article
- Ultrasensitive Quantum Sensors Based on High-Order Exceptional Bound States.Research (Washington, D.C.) · 2026Article
- ℤ-Classified Topological Phases and Bound States in the Continuum Induced by Multiple Orbitals.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Quantum 2-Player Games and Realizations with Circuits.Research (Washington, D.C.) · 2024Article
Corrections and comments
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Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
High-precision sensors are of fundamental importance in modern society and technology. Although numerous sensors have been developed, obtaining sensors with higher levels of sensitivity and stronger robustness has always been expected. Here, we propose theoretically and demonstrate experimentally an alternative class of sensors with superior performances based on exotic properties of high-order non-Hermitian topological physics. The frequency shift induced by perturbations for these sensors can show an exponential growth with respect to the size of the device, which can grow well beyond the limitations of conventional sensors. The fully integrated circuit chips have been designed and fabricated in a standard 65-nanometer complementary metal-oxide semiconductor process technology. Not only has the sensitivity of systems less than 10
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Registered trials
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