ArticleNature communications2024
Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
3 citing papers in PubMed.
- Overcoming Subjectivity in Bandgap Evaluation through On-Resonance Fluorescence: Establishing a Robust and Objective Optical Metric for Fluorescent Materials.ACS measurement science au · 2026Article
- Metamorphosis from Quantum Dots to Quantum Shells and Highly Efficient Quantum Shell Light-Emitting Diodes.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Emergence of Near-Infrared Photoluminescence via ZnS Shell Growth on the AgBiSChemistry of materials : a publication of the American Chemical Society · 2025Article
Corrections and comments
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Authors and funding
9 authors.
Funding
Abstract
Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through the formation of quantum shells on the surface of ZnS nanocrystals. The ZnS/GaP quantum shell with a reverse-type I heterojunction, consisting of a monolayer-thin GaP shell grown atop a ZnS core, exhibits a record-high photoluminescence quantum yield of 45.4% in the violet emission range (wavelength = 409 nm), validating its direct bandgap nature. Density functional theory calculations further reveal that ZnS nanocrystals, as the growth platform for GaP quantum shells, play a crucial role in the direct bandgap formation through hybridization of electronic states with GaP. These findings suggest potential for achieving direct bandgaps in compounds that are constrained by their inherent indirect energy gaps, offering a strategy for tailoring energy structures to significantly improve efficiencies in optoelectronics and photovoltaics.
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Registered trials
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