ReviewNanomaterials (Basel, Switzerland)2024
Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits.
Review in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
- Ultra-Low Power CMOS Logic and Photodetection in WSeACS applied materials & interfaces · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
Abstract
As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high-
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.