ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Thin Film Stoichiometry and Defects Management for Low Threshold and Air Stable Near-Infrared Perovskite Laser.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Thermomechanical regulation of quasi-2D perovskite photonic structures via nanoimprint.Science advances · 2026Article
- Impact of Nano-Scale Defects on the Macroscopic Amplified Spontaneous Emission in Polycrystalline Perovskite Thin-Films.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Stable, Room-Temperature, Low-Threshold Amplified Spontaneous Emission from Thermally Evaporated Cesium Lead Halide Perovskites.ACS nano · 2025Article
- Thin Film Stoichiometry and Defects Management for Low Threshold and Air Stable Near-Infrared Perovskite Laser.Advanced materials (Deerfield Beach, Fla.) · 2025Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
While significant efforts have been devoted to optimize the thin-film stoichiometry and processing of perovskites for applications in photovoltaic and light-emitting diodes, there is a noticeable lack of emphasis on tailoring them for lasing applications. In this study, it is revealed that thin films engineered for efficient light-emitting diodes, with passivation of deep and shallow trap states and a tailored energetic landscape directing carriers toward low-energy emitting states, may not be optimal for light amplification systems. Instead, amplified spontaneous emission (ASE) is found to be sustained by shallow defects, driven by the positive correlation between the ASE threshold and the ratio of carrier injection rate in the emissive state to the recombination rate of excited carriers. This insight has informed the development of an optimized perovskite thin film and laser device exhibiting a low threshold (≈ 60 µJ cm
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