Evidence map›Paper›PMID 39227364›Full record

ArticleLight, science & applications2024

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays.

Xutao Zhang, Fanlu Zhang, Ruixuan Yi, Naiyin Wang, Zhicheng Su, Mingwen Zhang, Bijun Zhao, Ziyuan Li, Jiangtao Qu, Julie M Cairney and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Light, science & applications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Review
  2. As-Flux-Induced Diameter Control in GaAs Nanowires.The journal of physical chemistry. C, Nanomaterials and interfaces · 2025
    Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Xutao ZhangFrontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China.
Fanlu ZhangDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Ruixuan YiKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
Naiyin WangDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Zhicheng SuDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Mingwen ZhangKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.ORCID http://orcid.org/0000-0002-1989-4767
Bijun ZhaoKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
Ziyuan LiDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Jiangtao QuAustralian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia.ORCID http://orcid.org/0000-0003-0357-4205
Julie M CairneyAustralian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia.
Yuerui LuSchool of Engineering, College of Engineering, The Australian National University, Canberra, ACT 2600, Australia.ORCID http://orcid.org/0000-0001-6131-3906
Jianlin ZhaoKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.ORCID http://orcid.org/0000-0002-4619-1215
Xuetao GanKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China. xuetaogan@nwpu.edu.cn.ORCID http://orcid.org/0000-0003-2469-5807
Hark Hoe TanDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.ORCID http://orcid.org/0000-0002-7816-537X
Chennupati JagadishDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Lan FuDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia. lan.fu@anu.edu.au.ORCID http://orcid.org/0000-0002-9070-8373

Funding

National Natural Science Foundation of China (National Science Foundation of China) 61775183National Natural Science Foundation of China (National Science Foundation of China) 62105267National Natural Science Foundation of China (National Science Foundation of China) 62375226, 62005222
6 · The paper itself

Abstract

Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO

Identifiers

PMID39227364
PMCPMC11372134

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.