Evidence map›Paper›PMID 39195396›Full record

ArticleNanomaterials (Basel, Switzerland)2024

Excellent Hole Mobility and Out-of-Plane Piezoelectricity in X-Penta-Graphene (X = Si or Ge) with Poisson's Ratio Inversion.

Sitong Liu, Xiao Shang, Xizhe Liu, Xiaochun Wang, Fuchun Liu, Jun Zhang

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Sitong LiuInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.ORCID 0009-0002-4434-027X
Xiao ShangInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.ORCID 0000-0002-7260-7018
Xizhe LiuInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
Xiaochun WangSchool of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
Fuchun LiuInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
Jun ZhangInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.

Funding

National Natural Science Foundation of China No. 11474123, No. 12374265 No. 11574116Natural Science Foundation of Jilin Province of China No. 20230101014JC No. 20220101015JC
6 · The paper itself

Abstract

Recently, the application of two-dimensional (2D) piezoelectric materials has been seriously hindered because most of them possess only in-plane piezoelectricity but lack out-of-plane piezoelectricity. In this work, using first-principles calculation, by atomic substitution of penta-graphene (PG) with tiny out-of-plane piezoelectricity, we design and predict stable 2D X-PG (X = Si or Ge) semiconductors with excellent in-plane and out-of-plane piezoelectricity and extremely high in-plane hole mobility. Among them, Ge-PG exhibits better performance in all aspects with an in-plane strain piezoelectric coefficient

Indexed as

2D materialscarrier mobilityfirst–principles calculationnegative Poisson’s ratiopiezoelectricity

Identifiers

PMID39195396
PMCPMC11357275

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.