ArticleACS applied materials & interfaces2024
Contact Resistance Engineering in WS
Article in ACS applied materials & interfaces, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
4 citing papers in PubMed.
- Evanescent Absorption Spectroscopy of Transition Metal Dichalcogenide Materials Using Guided Photoluminescence in SiACS applied optical materials · 2026Article
- Two-dimensional crystalline hard masks for high-aspect-ratio nanofabrication.Nature materials · 2026Article
- Unveiling the Potential of Reduced Graphene Oxide in Self-Powered Photodetectors.Chemphyschem : a European journal of chemical physics and physical chemistry · 2026Review
- Exploring the Application of Gold-Assisted Exfoliation in Large-scale Integration of n-Type and p-Type 2D-FETs.Small methods · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.