ArticleNature communications2024
Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Experimental demonstration and transformation mechanism of quenchable two-dimensional diamond.Nature communications · 2026Article
- Laser activation of single group-IV colour centres in diamond.Nature communications · 2025Article
- Molecular geometry specific Monte Carlo simulation of the efficacy of diamond crystal formation from diamondoids.Communications chemistry · 2024Article
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Authors and funding
14 authors.
Funding
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Abstract
Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser-heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.
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Registered trials
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