ArticleLight, science & applications2024
Thin film ferroelectric photonic-electronic memory.
Article in Light, science & applications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
7 citing papers in PubMed.
- Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing.Nature communications · 2026Article
- Spontaneous formation and optical manipulation of a woven domain fabric in a ferroelectric crystal.Light, science & applications · 2026Article
- Light polarization-based electro-optic memory.Nature communications · 2026Article
- Giant Switchable Remanent Polarization and Photocurrent in Ferroelectric Thin Film Photomemristor for In Situ Training.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Multisensory Neuromorphic Devices: From Physics to Integration.Nano-micro letters · 2026Review
- Advancing the Frontiers of HfOAdvanced materials (Deerfield Beach, Fla.) · 2025Review
- Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator.Light, science & applications · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
15 authors.
Funding
Abstract
To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods, assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.