ArticleAdvanced materials (Deerfield Beach, Fla.)2024
Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals.
Article in Advanced materials (Deerfield Beach, Fla.), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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Who cites it
8 citing papers in PubMed.
- Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.Nature communications · 2026Article
- Recrystallization-Driven Formation of Single-Crystalline MoSSmall methods · 2026Article
- Atomic Step-Terrace Ordering Enables Unprecedentedly Low Pop-in Stress Scatter in GaN (0001).Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Self-aligned and self-limiting van der Waals epitaxy of monolayer MoSNature communications · 2026Article
- Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors.Nature communications · 2025Article
- Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals.Nature communications · 2025Article
- Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors.Nature communications · 2025Article
- Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals.Advanced materials (Deerfield Beach, Fla.) · 2024Article
Corrections and comments
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Authors and funding
16 authors.
Funding
Abstract
Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS
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Registered trials
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