ArticleMicrosystems & nanoengineering2024
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft.
Article in Microsystems & nanoengineering, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Nitride-Based Quantum Structures in Optoelectronics-A Survey of Colors.Materials (Basel, Switzerland) · 2026Review
- Multifunctional graphene oxide and PEDOTPSS nanocomposite enabling highly efficient blue multishelled ZnSeTe quantum dot light emitting diodes.Scientific reports · 2026Article
- Polarization resolved deep ultraviolet microscopy for label free imaging with enhanced nuclei and fiber contrast.Optics and lasers in engineering · 2026Article
- Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire.Nanomaterials (Basel, Switzerland) · 2024Article
Corrections and comments
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Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO
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