ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2024
Effects of Phosphorus Doping on Amorphous Boron Nitride's Chemical, Sorptive, Optoelectronic, and Photocatalytic Properties.
Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Adsorption and Sensing Behavior of Pristine, P-Doped, and Al-Doped Boron Nitride Nanosheets Toward Toxic Hydrogen Fluoride Gas: Insights from Density Functional Theory Analysis.ChemistryOpen · 2026Article
- Boron-Functionalized Graphitic Carbon Nitride Materials for Photocatalytic Applications: Effects on Chemical, Adsorptive, Optoelectronic, and Photocatalytic Properties.ACS materials Au · 2025Article
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Authors and funding
13 authors.
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Abstract
Amorphous porous boron nitride (BN) represents a versatile material platform with potential applications in adsorptive molecular separations and gas storage, as well as heterogeneous and photo-catalysis. Chemical doping can help tailor BN's sorptive, optoelectronic, and catalytic properties, eventually boosting its application performance. Phosphorus (P) represents an attractive dopant for amorphous BN as its electronic structure would allow the element to be incorporated into BN's structure, thereby impacting its adsorptive, optoelectronic, and catalytic activity properties, as a few studies suggest. Yet, a fundamental understanding is missing around the chemical environment(s) of P in P-doped BN, the effect of P-doping on the material features, and how doping varies with the synthesis route. Such a knowledge gap impedes the rational design of P-doped porous BN. Herein, we detail a strategy for the successful doping of P in BN (P-BN) using two different sources: phosphoric acid and an ionic liquid. We characterized the samples using analytical and spectroscopic tools and tested them for CO
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