ArticleNature communications2024
Deterministic grayscale nanotopography to engineer mobilities in strained MoS
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
10 citing papers in PubMed.
- Unconventional cross-step growth of monolayer MoSScience advances · 2026Article
- Electric-Field Sensor Based on Multilayer-MoSACS applied materials & interfaces · 2026Article
- Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.Nature communications · 2026Review
- Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Quantitative mapping of smooth topographic landscapes generated using thermal scanning-probe lithography.Nature protocols · 2026Review
- Strained 2D Semiconductor Lateral Heterojunctions via Grayscale Thermal-Scanning Probe Lithography.Small science · 2026Article
- Beyond binary patterning: polypropylene carbonate as a versatile thermal resist for high-fidelity grayscale Nanofabrication.Microsystems & nanoengineering · 2026Article
- Gradient Electronic Landscapes in van der Waals Heterostructures.Nano letters · 2025Article
- Geometrically Confined Strain Engineering of MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
17 authors.
Funding
Abstract
Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.