ArticleNature materials2024
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate.
Article in Nature materials, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.
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The trial behind it
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Who cites it
21 citing papers in PubMed.
- Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.Nature communications · 2026Article
- Symmetry breaking induces room-temperature interface ferroelectricity in two-dimensional metastable mosaic-like heterostructures.Nature communications · 2026Article
- Wafer-scale growth of highly stable p-type semiconducting monolayer MoSiNature materials · 2026Article
- Spin-photon qubits for scalable quantum network.Light, science & applications · 2026Review
- Wafer-Scale Fabrication of Uniform Few-Layer Hexagonal Boron Nitride Stacks for Memristor Applications.Nanomaterials (Basel, Switzerland) · 2026Article
- Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Twelve-inch electrically anisotropic boridene for optoelectronic computing.Nature nanotechnology · 2026Article
- Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.Molecules (Basel, Switzerland) · 2026Article
- Sieving Hydrogen Isotopes via Machine Learning Assisted Chemical Vapor Deposition (CVD) of High-Quality Monolayer Hexagonal Boron Nitride (h-BN) on Iron Foils.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- A universal all-dry microfabrication method for sensitive electronic materials via an inorganic molecular lithographic mediator.Nature communications · 2026Article
- A reconfigurable photosensitive split-floating-gate memory for neuromorphic computing and nonlinear activation.Nature communications · 2026Article
- Surface-energy-compensated fabrication of single-crystal alloy films with atomic-scale flatness.Nature communications · 2026Article
- WSeNano letters · 2025Article
- Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001).Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.Nature communications · 2025Article
- Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors.Nature communications · 2025Article
- Texture-engineered fabrication of ultraflat, 6-inch single-crystal Cu(111) wafers.Science advances · 2025Article
- Microwave-Driven Crystallographic Alignment for Producing Metal (M) Thin Films with Highly-Oriented M(111) Surface.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates.Nanomaterials (Basel, Switzerland) · 2025Review
- Rapid growth of inch-sized lanthanide oxychloride single crystals.Nature materials · 2025Article
Corrections and comments
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Authors and funding
15 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric integration in the next-generation large-scale integrated electronics. Although numerous efforts have been devoted to growing single-crystal hBN film, wafer-scale ultraflat hBN has still not been achieved. Here, we report the epitaxial growth of 4 in. ultraflat single-crystal hBN on Cu
Identifiers
39134650What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.