Evidence map›Paper›PMID 39120835›Full record

ReviewNano-micro letters2024

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor.

Jing Chen, Ming-Yuan Sun, Zhen-Hua Wang, Zheng Zhang, Kai Zhang, Shuai Wang, Yu Zhang, Xiaoming Wu, Tian-Ling Ren, Hong Liu and 1 more

Abstract readReview
In one paragraph

Review in Nano-micro letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 11 papers.

0numbers the graph read from it
0cells of the map it votes in
11citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

11 citing papers in PubMed.

  1. Far-Infrared Hyperbolic Phonon-Polaritons in Zirconium Disulfide.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  2. Anisotropic 2D MoACS omega · 2026
    Article
  3. Article
  4. Article
  5. Article
  6. Article
  7. Article
  8. Two-dimensional TaSRSC advances · 2025
    Article
  9. Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoSACS applied materials & interfaces · 2025
    Article
  10. Review
  11. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Jing ChenInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Ming-Yuan SunInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Zhen-Hua WangInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Zheng ZhangInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Kai ZhangInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Shuai WangInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Yu ZhangInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
Xiaoming WuSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
Tian-Ling RenSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China. rentl@tsinghua.edu.cn.
Hong LiuState Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
Lin HanInstitute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China. hanlin@sdu.edu.cn.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

Indexed as

Artificial synapsesDimension limitsMemory devicesPerformance limitsTwo-dimensional transistors

Identifiers

PMID39120835
PMCPMC11315877

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.