ArticleHeliyon2024
The effect of Zn doping on the structure, phase transformation and electric properties of 0.5BZT-0.5BCT materials.
Article in Heliyon, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
In the current study, an improved method of adding Zn ion doping to the 0.5BZT-0.5BCT-based films with high pyroelectric properties was designed. Under different Zn ion doping ratios, the structure, dielectric constant, phase transition relationship and other characteristics of the test product were analyzed experimentally to obtain the optimal ratio parameters. The experimental results demonstrate that the dielectric properties of the 0.5BZT-0.5BCT-xZn-based films proposed in this study can be far superior to those of other films under the optimal preparation process. The optimal dielectric properties and ferroelectric properties are obtained when the doped data are 0.008. Considering the comprehensive dielectric and energy storage capacity, the optimal doping ratio is 0.01, which can take into account dielectric data and energy storage performance. The energy storage density is 1.842
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