ArticleACS applied electronic materials2024
Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures.
Article in ACS applied electronic materials, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Detection of Germanium Nanocrystals as Tracer Materials in Polypropylene via Raman Spectroscopy.Materials (Basel, Switzerland) · 2026Article
- Unraveling Energy Flow Mechanisms in Semiconductors by Ultrafast Spectroscopy: Germanium as a Case Study.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- High-quality and field resilient microwave resonators on Ge quantum well heterostructures.NPJ quantum information · 2026Article
- Impact of Surface Treatments on the Transport Properties of Germanium 2DHGs.ACS applied electronic materials · 2025Article
- A Backgate for Enhanced Tunability of Holes in Planar Germanium.Nano letters · 2024Article
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Authors and funding
10 authors.
Funding
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Abstract
One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostructure can be grown using the so-called reverse linear grading approach, where the growth starts with a virtual germanium substrate followed by a graded silicon-germanium alloy with an increasing silicon content. However, the compatibility of such reverse-graded heterostructures with superconducting microwave resonators has not yet been demonstrated. Here, we report on the successful realization of well-controlled double quantum dots and high-quality coplanar waveguide resonators on the same reverse-graded Ge/SiGe heterostructure.
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