Flexible and Disposable Hafnium Nitride Extended Gates Fabricated by Low-Temperature High-Power Impulse Magnetron Sputtering.

Chia-Ming Yang, Chao-Hui Wei, Jia-Yuan Chang, Chao-Sung Lai

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

High-Performance Plasmonic Hafnium Nitride Nanocavity and Nanodisk Arrays for Enhanced Refractometric Sensing.ACS applied materials & interfaces · 2025
Article

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PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Chia-Ming YangDepartment of Electronic Engineering, Chang Gung University, Taoyuan City 33303, Taiwan.ORCID 0000-0002-6824-5296

Chao-Hui WeiDepartment of Electronic Engineering, Chang Gung University, Taoyuan City 33303, Taiwan.

Jia-Yuan ChangDepartment of Electronic Engineering, Chang Gung University, Taoyuan City 33303, Taiwan.

Chao-Sung LaiDepartment of Electronic Engineering, Chang Gung University, Taoyuan City 33303, Taiwan.ORCID 0000-0002-2069-7533

Funding

Linkou Chang Gung Memorial Hospital CMRPD2N0031,CMRPD2N0032,CMRPD2N0041,CMRPD2N0042National Science and Technology Council 112-2221-E-182-004-MY3,11-2923-E-182-001-MY3,110-2221-E-182-043-MY3,109-2221-E-182-013-MY3

6 · The paper itself

Abstract

To obtain a high-performance extended gate field-effect transistor for pH detection, hafnium nitride (HfN) was first fabricated on an indium tin oxide on polyethylene terephthalate (ITO/PET) substrate using a high-power impulse magnetron sputter system (HiPIMS) in this study. It can be easily applied in biomedical diagnostic and environmental monitoring applications with the advantages of flexible, disposable, cost-effective, and reliable components. Various duty cycle conditions in HiPIMSs were designed to investigate the corresponding sensing performance and material properties including surface morphology and composition. As the duty cycle increased, the grain size of HfN increased. Additionally, X-ray photoelectron spectroscopy (XPS) analysis illustrated the presence of HfO

Indexed as

extended-gate field-effect transistorflexibleHfNHiPIMS

Identifiers

PMID39057868

DOI10.3390/nano14141191

PMCPMC11279940

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.