ArticleThe journal of physical chemistry letters2024
Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact.
Article in The journal of physical chemistry letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
1 citing paper in PubMed.
- Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation.ACS applied electronic materials · 2025Article
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Authors and funding
3 authors.
Funding
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Abstract
The complex ionic-electronic conduction in mixed halide perovskites enables their use beyond von Neumann architectures implemented in resistive switching memory devices. Although device fabrication based on perovskite compounds involves solution-processing at low temperatures, reducing further fabrication costs by eliminating expensive materials can improve their compatibility with upscalable deposition techniques. Notably, the substrate on which the perovskite active layer is developed has been reported to severely affect its quality and thus the overall device performance. Hereby, we demonstrate the sustainable manufacturing of memristive perovskite solar cells by replacing the expensive poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) that serves as a hole transporting layer (HTL) with a self-assembled monolayer (SAM), namely [2-(3,6-dimethoxy-9
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Registered trials
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