ArticleAdvanced materials (Deerfield Beach, Fla.)2024
Edge-Passivated Monolayer WSe
Article in Advanced materials (Deerfield Beach, Fla.), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
8 citing papers in PubMed.
- Edge-Bound Doping Effect in Oxidation-Etched CVD MoSSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.Nature communications · 2026Article
- Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.Nature nanotechnology · 2026Article
- Oxide induced degradation in MoSNPJ 2D materials and applications · 2026Article
- Article
- Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSeAdvanced electronic materials · 2025Article
- Detecting DNA translocation through a nanopore using a van der Waals heterojunction diode.Proceedings of the National Academy of Sciences of the United States of America · 2025Article
- Detecting DNA Translocation through a Nanopore using a van der Waals Heterojunction Diode.Research square · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
Abstract
The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.