ArticleSensors (Basel, Switzerland)2024
A 64 × 128 3D-Stacked SPAD Image Sensor for Low-Light Imaging.
Article in Sensors (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
5 citing papers in PubMed.
- An FPGA-Based Event-Timing Front-End for Time-Resolved Sensing with Dual-Mode Experimental Characterization.Sensors (Basel, Switzerland) · 2026Article
- Comprehensive Comparison of Front- and Back-Illuminated Single-Photon Avalanche Diodes in 110 nm Standard CMOS Image Sensor Technology.Sensors (Basel, Switzerland) · 2026Article
- Performance Bounds of Ranging Precision in SPAD-Based dToF LiDAR.Sensors (Basel, Switzerland) · 2025Article
- An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors.Sensors (Basel, Switzerland) · 2025Article
- Next-Gen Medical Imaging: U-Net Evolution and the Rise of Transformers.Sensors (Basel, Switzerland) · 2024Review
Corrections and comments
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Authors and funding
11 authors.
Funding
Abstract
Low-light imaging capabilities are in urgent demand in many fields, such as security surveillance, night-time autonomous driving, wilderness rescue, and environmental monitoring. The excellent performance of SPAD devices gives them significant potential for applications in low-light imaging. This article presents a 64 (rows) × 128 (columns) SPAD image sensor designed for low-light imaging. The chip utilizes a three-dimensional stacking architecture and microlens technology, combined with compact gated pixel circuits designed with thick-gate MOS transistors, which further enhance the SPAD's photosensitivity. The configurable digital control circuit allows for the adjustment of exposure time, enabling the sensor to adapt to different lighting conditions. The chip exhibits very low dark noise levels, with an average DCR of 41.5 cps at 2.4 V excess bias voltage. Additionally, it employs a denoising algorithm specifically developed for the SPAD image sensor, achieving two-dimensional grayscale imaging under 6 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.