High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires.

Zhilin Chen, Xingyi Tan, Qiang Li, Jing Wan, Gang Xu

Abstract read

In one paragraph

Article in Molecules (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

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0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

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2 · The registry

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3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Editorial of Conjugated Polymers: Preparation, Properties and Applications.Polymers · 2025
Article

4 · The record

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5 · Who and what money

Authors and funding

5 authors.

Zhilin ChenDepartment of Physics, Chongqing Three Gorges University, Wanzhou 404100, China.

Xingyi TanDepartment of Physics, Chongqing Three Gorges University, Wanzhou 404100, China.ORCID 0000-0002-6290-4908

Qiang LiCollege of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China.

Jing WanDepartment of Physics, Chongqing Three Gorges University, Wanzhou 404100, China.

Gang XuDepartment of Physics, Chongqing Three Gorges University, Wanzhou 404100, China.

Funding

National Natural Science Foundation of China 11864011

6 · The paper itself

Abstract

Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE molecular wire field-effect transistor (FET) efficiency limit through the geometry of the gate-all-around (GAA) instrument. It is observed that the n-type GAA PPE molecular wire FETs with a suitable gate length (

Indexed as

density functional theoryquantum transport simulationsub-5 nm gate lengthtransistor

Identifiers

PMID38999159

DOI10.3390/molecules29133207

PMCPMC11243332

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