Evidence map›Paper›PMID 38998983›Full record

ArticleMolecules (Basel, Switzerland)2024

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis).

Larisa Latypova, Fadis Murzakhanov, George Mamin, Margarita Sadovnikova, Hans Jurgen von Bardeleben, Julietta V Rau, Marat Gafurov

Abstract read
In one paragraph

Article in Molecules (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Mechanisms and advances in field assisted machining of SiC.The International journal, advanced manufacturing technology · 2026
    Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Larisa LatypovaSchool of Chemistry and Chemical Engineering, Harbin Institute of Technology, 92 West Da-Zhi Street, Harbin 150001, China.
Fadis MurzakhanovInstitute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia.ORCID 0000-0001-7601-6314
George MaminInstitute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia.
Margarita SadovnikovaInstitute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia.
Hans Jurgen von BardelebenInstitut des Nanosciences de Paris, Campus Pierre et Marie Curie, Sorbonne Université, 4, Place Jussieu, 75005 Paris, France.
Julietta V RauIstituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, ISM-CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.ORCID 0000-0002-7953-1853
Marat GafurovInstitute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia.ORCID 0000-0002-2179-2823

Funding

Russian state assignment in the sphere of scientific activities Project No. FZSM-2024-0010
6 · The paper itself

Abstract

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (

Indexed as

color centerselectron–nuclear double resonanceelectron paramagnetic resonancenitrogen-vacancy centersemiconductorssilicon carbide

Identifiers

PMID38998983
PMCPMC11243473

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.