Evidence map›Paper›PMID 38998674›Full record

ArticleNanomaterials (Basel, Switzerland)2024

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation.

Guoxiu Zhang, Lars Rebohle, Fabian Ganss, Wojciech Dawidowski, Elzbieta Guziewicz, Jung-Hyuk Koh, Manfred Helm, Shengqiang Zhou, Yufei Liu, Slawomir Prucnal

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Guoxiu ZhangHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Lars RebohleHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Fabian GanssHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Wojciech DawidowskiFaculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland.ORCID 0000-0001-6577-3854
Elzbieta GuziewiczInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland.ORCID 0000-0001-6158-5258
Jung-Hyuk KohDepartment of Intelligent Energy and Industry, Chung-Ang University, Seoul 06974, Republic of Korea.
Manfred HelmHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Shengqiang ZhouHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0002-4885-799X
Yufei LiuKey Laboratory of Optoelectronic Technology & Systems, Ministry of Education, Chongqing University, Chongqing 400044, China.ORCID 0000-0003-2988-8843
Slawomir PrucnalHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.

Funding

China Scholarship Council No. 202106050117
6 · The paper itself

Abstract

Zinc oxide (ZnO) is a wide bandgap semiconductor that holds significant potential for various applications. However, most of the native point defects in ZnO like Zn interstitials typically cause an n-type conductivity. Consequently, achieving p-type doping in ZnO is challenging but crucial for comprehensive applications in the field of optoelectronics. In this work, we investigated the electrical and optical properties of ex situ doped p-type ZnO films. The p-type conductivity has been realized by ion implantation of group V elements followed by rapid thermal annealing (RTA) for 60 s or flash lamp annealing (FLA) on the millisecond time scale in nitrogen or oxygen ambience. The phosphorus (P)-doped ZnO films exhibit stable p-type doping with a hole concentration in the range of 10

Indexed as

atomic layer depositionflash lamp annealingion implantationp-type-doped ZnOrapid thermal annealing

Identifiers

PMID38998674
PMCPMC11243417

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.