ReviewNature nanotechnology2024
Understanding epitaxial growth of two-dimensional materials and their homostructures.
Review in Nature nanotechnology, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 22 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
22 citing papers in PubMed.
- Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.Nature communications · 2026Article
- Recrystallization-Driven Formation of Single-Crystalline MoSSmall methods · 2026Article
- Unconventional cross-step growth of monolayer MoSScience advances · 2026Article
- Van der Waals template-encoded soft epitaxy of tellurium enabled by atomic layer deposition.Science advances · 2026Article
- KNature communications · 2026Article
- Two-dimensional melt growth of large-scale, single-crystalline hybrid organic-inorganic perovskite films.Nature communications · 2026Article
- Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Beyond Seamless: Unexpected Defective Merging in Single-Orientation Graphene.Small science · 2026Article
- Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics.Light, science & applications · 2026Article
- Self-aligned and self-limiting van der Waals epitaxy of monolayer MoSNature communications · 2026Article
- Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy.Small methods · 2025Article
- Manipulating mechanical strength of isoreticular two-dimensional polyamide materials via multiple interactions.Nature communications · 2025Article
- Fast ultraviolet-C photonics: generating and sensing laser pulses on femtosecond timescales.Light, science & applications · 2025Article
- Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals.Nature communications · 2025Article
- Overcoming Material Incompatibility via 2D Free-Surface Engineering.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- DNA moiré superlattices.Nature nanotechnology · 2025Article
- Growing moiré with DNA.Nature nanotechnology · 2025Article
- Atomic-resolution imaging reveals nucleus-free crystallization in two-dimensional amorphous ice on graphite.Nature communications · 2025Article
- Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy.Science advances · 2025Article
- Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates.Nanomaterials (Basel, Switzerland) · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
Abstract
The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.
Identifiers
38987649What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.