ArticleLight, science & applications2024
Anneal-free ultra-low loss silicon nitride integrated photonics.
Article in Light, science & applications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.
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Who cites it
15 citing papers in PubMed.
- Emerging integrated photonic neural network technologies for artificial intelligence: from devices to systems.National science review · 2026Review
- Breaking the Size-Tolerance Trade-off in Vertical Couplers via Adjoint-Based Inverse Design.Nanophotonics (Berlin, Germany) · 2026Article
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- Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators.Light, science & applications · 2026Article
- Amorphous metal oxide mixtures for high-Communications physics · 2026Article
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- Overcoming stress limitations in SiN nonlinear photonics via a bilayer waveguide.Nanophotonics (Berlin, Germany) · 2025Article
- Multifunctional van der Waals PdSeNature communications · 2025Article
- Large mode volume integrated Brillouin lasers for scalable ultra-low linewidth and high power.Nature communications · 2025Article
- Emerging Trends in Thermo-Optic and Electro-Optic Materials for Tunable Photonic Devices.Materials (Basel, Switzerland) · 2025Review
- Integrated Photonic Biosensors: Enabling Next-Generation Lab-on-a-Chip Platforms.Nanomaterials (Basel, Switzerland) · 2025Review
- Temporal point-by-point arbitrary waveform synthesis beyond tera sample per second.Nature communications · 2025Article
- Investigation of Modal Characteristics of Silicon Nitride Ridge Waveguides for Enhanced Refractive Index Sensing.Micromachines · 2025Article
- A thin film lithium niobate near-infrared platform for multiplexing quantum nodes.Nature communications · 2024Article
- Ultra-low loss silicon nitride becomes even cooler.Light, science & applications · 2024Article
Corrections and comments
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Authors and funding
8 authors.
Funding
Abstract
Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m
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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.