Evidence map›Paper›PMID 38958519›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.

Zhidong Pan, Jielian Zhang, Xueting Liu, Lei Zhao, Jingyi Ma, Chunlai Luo, Yiming Sun, Zhiying Dan, Wei Gao, Xubing Lu and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Review
  2. Article
  3. Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Zhidong PanSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Jielian ZhangSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Xueting LiuSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Lei ZhaoSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Jingyi MaSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Chunlai LuoSchool of South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
Yiming SunSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Zhiying DanSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Wei GaoSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
Xubing LuSchool of South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
Jingbo LiCollege of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
Nengjie HuoSchool of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.ORCID https://orcid.org/0000-0003-2520-6243

Funding

Guangdong Basic and Applied Basic Research Foundation 2024A1515030107National Natural Science Foundation of China 11904108National Natural Science Foundation of China 62174059"The Pearl River Talent Recruitment Program" 2019ZT08X639
6 · The paper itself

Abstract

Resistive switching memories have garnered significant attention due to their high-density integration and rapid in-memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak-path current problem that limits their scalability. Here, a mild-temperature thermal oxidation technique for the fabrication of low-power and ultra-steep memristor based on Ag/TiO

Indexed as

1T1R integrationmemristorresistive switchingthermal oxidationtransistor

Identifiers

PMID38958519
PMCPMC11434030

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.