ArticleNature communications2024
Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Ultra-broadband wireless rectification and frequency mixing via the nonlinear Hall effect in TaIrTeNature communications · 2026Article
- Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(BiNature communications · 2026Article
- Lorentz skew scattering and giant nonreciprocal magneto-transport.Nature communications · 2026Article
- Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAsAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Dynamically tunable polarized mid-infrared light-emitting diodes from polarization singularities in a band-edge Weyl node.Nature communications · 2025Article
- Ultrabroadband nonlinear Hall rectifier using SnTe.Nature nanotechnology · 2025Article
- Nonlinear Nernst effect in trilayer graphene at zero magnetic field.Nature nanotechnology · 2025Article
- Nonlinear transport in non-centrosymmetric systems.Nature materials · 2025Review
- Terahertz Radiation Driven Nonlinear Transport Phenomena in Two-Dimensional Tellurene.Nano letters · 2025Article
- Article
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Authors and funding
10 authors.
Funding
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Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
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Registered trials
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