ArticleFundamental research2022
Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide.
Article in Fundamental research, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Advances in 2D Group IV Monochalcogenides: Synthesis, Properties, and Applications.Materials (Basel, Switzerland) · 2025Review
- Recent Progress on Layered Sn and Pb-Based Mono Chalcogenides: Synthesis, Structure, Optical, and Thermoelectric Properties and Related Applications.Nanomaterials (Basel, Switzerland) · 2024Review
- General low-temperature growth of two-dimensional nanosheets from layered and nonlayered materials.Nature communications · 2023Article
- Broadband and Incident-Angle-Modulation Near-Infrared Polarizers Based on Optically Anisotropic SnSe.Nanomaterials (Basel, Switzerland) · 2022Article
- Stability & durability of self-driven photo-detective parameters based on SnRSC advances · 2022Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Tin selenide (SnSe) has attracted considerable interest recently on account of its low-symmetry lattice structure, great compatibility with key semiconductor technology, and remarkable electrical and optical performance. SnSe-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric performance. Here, an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy (ARPRS), polarization-resolved optical microscopy(PROM), angle-resolved optical absorption spectroscopy (AROAS), and other crystal structure characterization methods. Moreover, SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio (2.31 at 1064 nm) due to the structure formed by the Van der Waals superposition of covalently bonded atomic layers. Furthermore, SnSe-based photodetectors have high responsivity (9.27 A/W), high detectivity (4.08 × 10
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