ArticleMicromachines2024
Influence of Normal-to-High Anodizing Voltage on AAO Surface Hardness from 1050 Aluminum Alloy in Oxalic Acid.
Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- A High-Density Nanoporous SERS Substrate Prepared by Facile One-Step Anodization for P-Hydroxybenzoic Acid Detection.Sensors (Basel, Switzerland) · 2026Article
- A systematic review on competitive screening and independent variable unification focused on PAA structural parameter calculation formulas in mild anodization.RSC advances · 2026Review
- Advances in Through-Hole Anodic Aluminum Oxide (AAO) Membrane and Its Applications: A Review.Nanomaterials (Basel, Switzerland) · 2025Review
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4 authors.
Funding
Abstract
Anodic aluminum oxide (AAO) has been widely applied for the surface protection of electronic component packaging through a pore-sealing process, with the enhanced hardness value reaching around 400 Vickers hardness (HV). However, the traditional AAO fabrication at 0~10 °C for surface protection takes at least 3-6 h for the reaction or other complicated methods used for the pore-sealing process, including boiling-water sealing, oil sealing, or salt-compound sealing. With the increasing development of nanostructured AAO, there is a growing interest in improving hardness without pore sealing, in order to leverage the characteristics of porous AAO and surface protection properties simultaneously. Here, we investigate the effect of voltage on hardness under the same AAO thickness conditions in oxalic acid at room temperature from a normal level of 40 V to a high level of 100 V and found a positive correlation between surface hardness and voltage. The surface hardness values of AAO formed at 100 V reach about 423 HV without pore sealing in 30 min. By employing a hybrid pulse anodization (HPA) method, we are able to prevent the high-voltage burning effect and complete the anodization process at room temperature. The mechanism behind this can be explained by the porosity and photoluminescence (PL) intensity of AAO. For the same thickness of AAO from 40~100 V, increasing the anodizing voltage decreases both the porosity and PL intensity, indicating a reduction in pores, as well as anion and oxygen vacancy defects, due to rapid AAO growth. This reduction in defects in the AAO film leads to an increase in hardness, allowing us to significantly enhance AAO hardness without a pore-sealing process. This offers an effective hardness enhancement in AAO under economically feasible conditions for the application of hard coatings and protective films.
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