ReviewNano-micro letters2024
New-Generation Ferroelectric AlScN Materials.
Review in Nano-micro letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
10 citing papers in PubMed.
- Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.Small methods · 2026Review
- Low Temperature Growth of High-Quality Wurtzite Ferroelectric Through Quasi-van der Waals Epitaxy.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in AlMicromachines · 2026Article
- Ferroelectric Devices for In-Memory and In-Sensor Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Interpretable Machine Learning with Prediction Uncertainty Quantification forMaterials (Basel, Switzerland) · 2026Article
- Enhancing film bulk acoustic resonators performance by optimizing AlN seed layer crystallinity and polarity alignment.Nature communications · 2026Article
- Phase Diagrams and Piezoelectric Properties of Wurtzite AlAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Write cycling endurance exceeding 10Nature communications · 2026Article
- Synaptic Plasticity Engineering for Neural Precision, Temporal Learning, and Scalable Neuromorphic Systems.Nano-micro letters · 2026Review
- Unveiling interfacial dead layer in wurtzite ferroelectrics.Nature communications · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.