Evidence map›Paper›PMID 38911342›Full record

ArticleMicrosystems & nanoengineering2024

Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing.

Emad Iranmanesh, Zihao Liang, Weiwei Li, Congwei Liao, Shunyu Jin, Chuan Liu, Kai Wang, Shengdong Zhang, Charalampos Doumanidis, Gehan A J Amaratunga and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Microsystems & nanoengineering, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Emad IranmaneshGuangdong Provincial Key Laboratory of In-Memory Computing Chips, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055 P. R. China.ORCID 0000-0002-7750-5360
Zihao LiangGuangdong Provincial Key Laboratory of In-Memory Computing Chips, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055 P. R. China.
Weiwei LiState Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 P. R. China.
Congwei LiaoGuangdong Provincial Key Laboratory of In-Memory Computing Chips, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055 P. R. China.
Shunyu JinHefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 23000 PR China.
Chuan LiuSchool of Electronics and Information Technology, Sun Yat-sen University, No. 132 East Waihuan Road, Guangzhou, 510006 P. R. China.ORCID 0000-0002-0695-592X
Kai WangSchool of Electronics and Information Technology, Sun Yat-sen University, No. 132 East Waihuan Road, Guangzhou, 510006 P. R. China.ORCID 0000-0003-2006-5760
Shengdong ZhangGuangdong Provincial Key Laboratory of In-Memory Computing Chips, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055 P. R. China.
Charalampos DoumanidisSchool of Mechanical Engineering, Guangdong Technion-Israel Institute of Technology, Shantou, 515063 P. R. China.
Gehan A J AmaratungaElectrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA United Kingdom.
Hang ZhouGuangdong Provincial Key Laboratory of In-Memory Computing Chips, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055 P. R. China.ORCID 0000-0002-0472-9515

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

With the rapid development of the Internet of Things (IoTs), wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness. The signal-to-noise-ratio has become the most critical performance factor to consider. To enhance it, on the one hand, good sensing materials/devices have been employed; on the other hand, signal amplification and noise reduction circuits have been used. However, most of these devices and circuits work in an active sampling mode, requiring frequent data acquisition and hence, entailing high-power consumption. In this scenario, a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great interest. Here, we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor (PBJT) that acts as an autonomous and highly sensitive, current- and/or voltage-mediated pressure sensor. The PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collector-base diodes. Upon force exertion on the emitter side, as a result of the piezoelectric effect, the emitter-base diode is forward biased while the collector-base diode is reverse biased. Due to the inherent BJT amplification effect, the PBJT achieves record-high sensitivities of 139.7 kPa

Indexed as

Electrical and electronic engineeringElectronic devicesSensors

Identifiers

PMID38911342
PMCPMC11189938

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.