ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Opposite Trap-State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Microscopic Origin of Polarity-Dependent VAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
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Authors and funding
12 authors.
Funding
Abstract
Threshold-switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis of multinary compounds. Furthermore, after threshold switching, the local structures gradually evolve to more stable energy states owing to the unstable homopolar bonds. Herein, based on trap analysis, DFT simulations, and operando XPS analysis, it is determined that the threshold switching mechanism is deeply related to the charged state of Se-Se homopolar defects. A threshold switching device is demonstrated with an excellent performance through the modification of the local structure via the addition of alloying elements and investigating the time-dependent trap evolution. The results concerning the trap dynamics of local atomic structures in threshold switching phenomena may be used to improve the design of amorphous chalcogenides.
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