Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation.

SiC ceramics are typically hard and brittle materials. Serious surface/subsurface damage occurs during the grinding process due to the poor self-sharpening ability of monocrystalline diamond grits. Nevertheless, recent findings have demonstrated that porous diamond grits can achieve high-efficiency and low-damage machining. However, research on the removal mechanism of porous diamond grit while grinding SiC ceramic materials is still in the bottleneck stage. A discrete element simulation model of the porous diamond grit while grinding SiC ceramics was established to optimize the grinding parameters (e.g., grinding wheel speed, undeformed chip thickness) and pore parameters (e.g., cutting edge density) of the porous diamond grit. The influence of these above parameters on the removal and damage of SiC ceramics was explored from a microscopic perspective, comparing with monocrystalline diamond grit. The results show that porous diamond grits cause less damage to SiC ceramics and have better grinding performance than monocrystalline diamond grits. In addition, the optimal cutting edge density and undeformed chip thickness should be controlled at 1-3 and 1-2 um, respectively, and the grinding wheel speed should be greater than 80 m/s. The research results lay a scientific foundation for the efficient and low-damage grinding of hard and brittle materials represented by SiC ceramics, exhibiting theoretical significance and practical value.