ArticleThe journal of physical chemistry letters2024
Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory.
Article in The journal of physical chemistry letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Observation of the transition from capacitive to inductive synaptic behavior.National science review · 2026Article
- Excitation Intervals Enhance Performance in Perovskite Solar Cells.ACS applied materials & interfaces · 2025Article
- Short-Term Bienenstock-Cooper-Munro Learning in Optoelectrically-Driven Flexible Halide Perovskite Single Crystal Memristors.Small methods · 2025Article
- Hysteresis in Perovskite Devices: Understanding the Abrupt Resistive Switching Mechanism.ACS energy letters · 2025Article
- Intensity-Modulated Photoluminescence Spectroscopy for Revealing Ionic Processes in Halide Perovskites.ACS energy letters · 2025Article
- Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications.Journal of the American Chemical Society · 2025Article
- Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation.ACS applied electronic materials · 2025Article
- Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model.The journal of physical chemistry letters · 2025Article
- Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Insights of BDAPbIACS omega · 2024Article
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Authors and funding
4 authors.
Funding
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Abstract
With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insight into the resistive switching of memristors governing the synaptic depression and potentiation functions, respectively. More importantly, the pulse width-dependent and long-term transient current measurements further demonstrate a dynamic transition from a fast capacitive to a slow inductive response, allowing for the tailored stimulus programming of memristor devices to mimic synaptic functionality.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.