Tuning Displacement Fields in a Two-Dimensional Topological Insulator Using Nanopatterned Gates.

Arman Rashidi, Sina Ahadi, Simon Munyan, William J Mitchell, Susanne Stemmer

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Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

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2 · The registry

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0 citing papers in PubMed.

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4 · The record

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5 · Who and what money

Authors and funding

5 authors.

Arman RashidiMaterials Department, University of California, Santa Barbara, California 93106-5050, United States.

Sina AhadiMaterials Department, University of California, Santa Barbara, California 93106-5050, United States.ORCID 0000-0001-7150-1679

Simon MunyanMaterials Department, University of California, Santa Barbara, California 93106-5050, United States.ORCID 0000-0002-5011-7560

William J MitchellDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-5050, United States.

Susanne StemmerMaterials Department, University of California, Santa Barbara, California 93106-5050, United States.ORCID 0000-0002-3142-4696

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Epitaxial heterostructures with topological insulators enable novel quantum phases and practical device applications. Their topological electronic states are sensitive to the microscopic parameters, including structural inversion asymmetry (SIA), which is an inherent feature of many real heterostructures. Controlling SIA is challenging, because it requires the ability to tune the displacement field across the topological film. Here, using nanopatterned gates, we demonstrate a tunable displacement field in a heterostructure of the two-dimensional topological insulator cadmium arsenide. Transport studies in magnetic fields reveal an extreme sensitivity of the band inversion to SIA. We show that a relatively small displacement field (∼50 mV/nm) converts the crossing of the two zeroth Landau levels in magnetic field to an avoided crossing, signaling a change to trivial band order. This work demonstrates a universal methodology for tuning electronic states in topological thin films.

Indexed as

Landau levelsMoiréRashba spin−orbit couplingsuperlatticeTopological insulator

Identifiers

PMID38842923

DOI10.1021/acs.nanolett.4c01518

PMCPMC11194848

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.