ArticleMicroscopy (Oxford, England)2024
Development of silicon-on-insulator direct electron detector with analog memories in pixels for sub-microsecond imaging.
Article in Microscopy (Oxford, England), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- Characterization of the INTPIX4 SOI pixel detector in transmission electron microscopy at 120 and 200 keV.Microscopy (Oxford, England) · 2025Article
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Authors and funding
7 authors.
Funding
Abstract
We have developed a high-speed recordable direct electron detector based on silicon-on-insulator technology. The detector has 16 analog memories in each pixel to record 16 images with sub-microsecond temporal resolution. A dedicated data acquisition system has also been developed to display and record the results on a personal computer. The performance of the direct electron detector as an image sensor is evaluated under electron irradiation with an energy of 30 keV in a low-voltage transmission electron microscope equipped with a photocathode electron gun. We demonstrate that the detector can record images at an exposure time of 100 ns and an interval of 900 ns.
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Registered trials
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