Evidence map›Paper›PMID 38819522›Full record

ArticleNano-micro letters2024

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening.

Xuanchi Yu, Jia Guo, Yulin Mao, Chengwei Shan, Fengshou Tian, Bingheng Meng, Zhaojin Wang, Tianqi Zhang, Aung Ko Ko Kyaw, Shuming Chen and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano-micro letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Review
  2. Review
  3. Article
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  5. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Xuanchi YuInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, People's Republic of China.
Jia GuoInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, People's Republic of China. jiaguo@um.edu.mo.
Yulin MaoInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, People's Republic of China.
Chengwei ShanDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Fengshou TianDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Bingheng MengDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Zhaojin WangDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Tianqi ZhangInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, People's Republic of China.
Aung Ko Ko KyawDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Shuming ChenDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Xiaowei SunDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Kai WangDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Rui ChenDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China. chenr@sustech.edu.cn.
Guichuan XingInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, People's Republic of China. gcxing@um.edu.mo.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Metal halide perovskites, particularly the quasi-two-dimensional perovskite subclass, have exhibited considerable potential for next-generation electroluminescent materials for lighting and display. Nevertheless, the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices. In this study, we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide. The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and, on the other hand, can screen the charged defects at the grain boundaries with potassium cations. This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films, leading to a significant enhancement of photoluminescence quantum yield to near-unity values (95%). Meanwhile, the potassium bromide treatment promoted the growth of homogeneous and smooth film, facilitating the charge carrier injection in the devices. Consequently, the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of ~ 21% and maximum luminance of ~ 60,000 cd m

Indexed as

Defects passivationDielectric screeningPerovskite light-emitting diodesSynergistic passivation strategy

Identifiers

PMID38819522
PMCPMC11143140

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.